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SEMICONDUCTORS

SUMMARY

(BR)DSS

= 60V : R

DS(on)

= 0.3 ; I

= 1.6A

DESCRIPTION

This new generation of trench MOSFETs from Zetex

utilizes a unique structure that combines the benefits of

low on-resistance with fast switching speed. This

makes them ideal for high efficiency, low voltage,

power management applications.

FEATURES

Compact package

Low on state losses

Low drive requirements

Operates up to 60V

1 Amp continuous rating

APPLICATIONS

Motor control

DEVICE MARKING

ZXMH

N6A07

ZXMHN6A07T8

ISSUE 2 - MAY 2004

60V N-CHANNEL MOSFET H-BRIDGE

SM8

TOP VIEW

PINOUT

DEVICE REEL

SIZE

TAPE

WIDTH

QUANTITY PER

REEL

ZXMHN6A07T8TA

7”

12mm 1,000 units

ZXMHN6A07T8TC 13” 12mm 4,000 units

ORDERING INFORMATION

1 2 3 4 5 6 7

ZXMHN6A07T8 1

Sommario

Pagina 1 - ZXMHN6A07T8

SEMICONDUCTORSSUMMARYV(BR)DSS= 60V : RDS(on)= 0.3 ; ID= 1.6ADESCRIPTIONThis new generation of trench MOSFETs from Zetexutilizes a unique structure t

Pagina 2

ZXMHN6A07T8SEMICONDUCTORSISSUE 2 - MAY 20042PARAMETER SYMBOL LIMIT UNITDrain-source voltage VDSS60 VGate-source voltage VGS±20 VContinuous drain curre

Pagina 3

ZXMHN6A07T8SEMICONDUCTORSISSUE 2 - MAY 20043CHARACTERISTICS

Pagina 4

ZXMHN6A07T8SEMICONDUCTORSISSUE 2 - MAY 20044PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONSSTATICDrain-source breakdown voltage V(BR)DSS60 VID= 250␮A,

Pagina 5

ZXMHN6A07T8SEMICONDUCTORSISSUE 2 - MAY 20045TYPICAL CHARACTERISTICS

Pagina 6

ZXMHN6A07T8SEMICONDUCTORSISSUE 2 - MAY 20046TYPICAL CHARACTERISTICS

Pagina 7

ZXMHN6A07T8SEMICONDUCTORSISSUE 2 - MAY 20047EuropeZetex GmbHStreitfeldstraße 19D-81673 MünchenGermanyTelefon: (49) 89 45 49 49 0Fax: (49) 89 45 49 49