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2DB1424R

PNP SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Complementary NPN Type Available (2DD2150)

• Ideally Suited for Automated Assembly Processes

• Ideal for Medium Power Switching or Amplification Applications

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

Mechanical Data

• Case: SOT89-3L

• Case Material: Molded Plastic, "Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish — Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.072 grams (approximate)

NEW PRODUCT

SOT89-3L

2,4

Schematic and Pin Configuration

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

CBO

-20 V

Collector-Emitter Voltage

CEO

-20 V

Emitter-Base Voltage

EBO

-6 V

Peak Pulse Current

-5 A

Continuous Collector Current

-3 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3) @ T

= 25°C P

1 W

Thermal Resistance, Junction to Ambient Air (Note 3) @ T

= 25°C

125 °C/W

Operating and Storage Temperature Range

, T

STG

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Conditions

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

(BR)CBO

-20

⎯ ⎯

= -50μA, I

= 0

Collector-Emitter Breakdown Voltage

(BR)CEO

-20

⎯ ⎯

= -1mA, I

= 0

Emitter-Base Breakdown Voltage

(BR)EBO

-6

⎯ ⎯

= -50μA, I

= 0

Collector Cut-Off Current

CBO

⎯ ⎯

-0.1

μA

= -20V, I

= 0

Emitter Cut-Off Current

EBO

⎯ ⎯

-0.1

μA

= -5V, I

= 0

ON CHARACTERISTICS (Note 4)

Collector-Emitter Saturation Voltage

CE(SAT)

⎯

-0.18 -0.5 V

= -2A, I

= -0.1A

DC Current Gain

180

⎯

390

⎯ V

= -2V, I

= -0.1A

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

obo

⎯

= -10V, I

= 0,

f = 1MHz

Current Gain-Bandwidth Product

⎯

220

⎯

MHz

= -2V, I

= 0.1A,

f = 100MHz

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can

be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

DS31329 Rev. 2 - 2

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2DB1424R

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Sommario

Pagina 1 - 2DB1424R

2DB1424R PNP SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (2DD2150) • Ideally Suited

Pagina 2 - NEW PRODUCT

00.20.425 5075100 125150P, POWER DISSIPATION (W)DT , AMBIENT TEMPERATURE (°C)Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)A0.60.81.00

Pagina 3 - (Top View)

0.1 1 10 100CiboCobo I , EMITTER CURRENT (mA)EFig. 8 Typical Gain-Bandwidth Product vs. Emitter Current0501001502002500102030405060708090100V = -

Pagina 4 - Suggested Pad Layout

Suggested Pad Layout 3.00.92.70.41.71.31.9Unit: mm NEW PRODUCT IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserv

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