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SOT89 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 4 – JUNE 1996 ✪

FEATURES

* Fast Switching

* High h

COMPLEMENTARY TYPE – BST16

PARTMAKING DETAIL – AT1

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

400 V

Collector-Emitter Voltage V

CEO

350 V

Emitter-Base Voltage V

EBO

Peak Pulse Current I

Continuous Collector Current I

500 mA

Power Dissipation at T

amb

=25°C P

tot

Operating and Storage Temperature Range T

stg

-65 to +150 °C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

(BR)CBO

400 V

=10µA

Collector-Emitter

Breakdown Voltage

(BR)CEO

350 V I

=1mA*

Emitter-Base

Breakdown Voltage

(BR)EBO

=10µA

Collector Cut-Off Current I

CBO

20 nA V

=300V

Collector-Emitter

Saturation Voltage

CE(sat)

0.5 V I

=50mA, I

=4mA

Base-Emitter

Saturation Voltage

BE(sat)

1.3 V I

=50mA, I

=4mA

Static Forward Current

Transfer Ratio

40 I

=20mA, V

=10V*

Output Capacitance C

obo

2pFV

=10V, f=1MHz

Input Capacitance C

ibo

20 pF V

=10V, f=1MHz

Transition Frequency f

70 MHz I

=10mA, V

=10V,

f=5MHz

* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

For typical characteristics graphs see FMMT458 datasheet.

BST39

SOT89

3 - 77

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SOT89 NPN SILICON PLANARHIGH VOLTAGE TRANSISTORISSUE 4 – JUNE 1996 ✪FEATURES* Fast Switching* High hFE.COMPLEMENTARY TYPE – BST16PARTMAKING DETAIL –

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