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DMS3014SSS

Document number: DS32265 Rev. 3 - 2

2 of 6

www.diodes.com

September 2010

DMS3014SSS

NEW PRODUCT

Electrical Characteristics @ T

= 25°C unless otherwise stated

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

DSS

30 - - V

= 0V, I

= 250μA

Zero Gate Voltage Drain Current

DSS

- - 100

μA

= 30V, V

= 0V

Gate-Source Leakage

GSS

- - ±100 nA

= ±12V, V

= 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

(

)

1.0 - 2.2 V

= V

, I

= 250A

Static Drain-Source On-Resistance

DS (ON)

m

= 10V, I

= 10.4A

= 4.5V, I

= 10.4A

Forward Transfer Admittance

- 23 - S

= 5V, I

= 10.4A

Diode Forward Voltage

- 0.37 0.5 V

= 0V, I

= 1A

Maximum Body-Diode + Schottky Continuous Current

- - 5 A -

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

iss

- 2296 - pF

= 15V, V

= 0V,

f = 1.0MHz

Output Capacitance

oss

- 164 - pF

Reverse Transfer Capacitance

rss

- 120 - pF

Gate Resistance

0.26 1.3 2.34 

= 0V, V

= 0V, f = 1MHz

Total Gate Charge V

= 4.5V Q

- 19.3 - nC

= 15V, V

= 10V, I

= 10.4A

Total Gate Charge V

= 10V Q

- 45.7 - nC

Gate-Source Charge

- 5.0 - nC

Gate-Drain Charge

- 2.9 - nC

Turn-On Delay Time

(

)

- 5.5 - ns

= 10V, V

= 15V,

= 3, R

= 1.2

Turn-On Rise Time

- 24.4 - ns

Turn-Off Delay Time

(

off

)

- 33.1 - ns

Turn-Off Fall Time

- 6.6 - ns

Notes: 6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

0 0.5 1 1.5 2

Fig. 1 Typical Output Characteristic

V , DRAIN-SOURCE VOLTAGE (V)

I, D

AIN

(A)

V = 2.0V

V = 2.2V

V = 2.5V

V = 3.0V

V = 3.5V

V = 4.5V

V = 4.0V

Fig. 2 Typical Transfer Characteristic

V , GATE-SOURCE VOLTAGE (V)

0 1 1.5 2 2.5 3

V = 85°C

V = 125°C

V = 25°C

V = -55°C

V = 150°C

V = 5V

0.5

I, D

(A)

1 2 3 4 5 6

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