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PAM8013/PAM8015
Document number: DS36979 Rev. 2 - 2
3 of 9
www.diodes.com
May 2014
© Diodes Incorporated
PAM8013/PAM8015
NEW PRODUCT
A PRODUCT LINE OF
DIODES INCORPORATED
Electrical Characteristics (@TA=25°C, VDD=5V, Gain=18dB, RL=L(33μH)+R+L(33μH), unless otherwise noted.)
Symbol Parameter Test Conditions Min Typ Max Unit
VDD Supply Voltage — 2.8 — 5.5 V
Po Output Power
THD+N = 10%, f = 1kHz, R = 4Ω
V
DD
= 5.0V
— 3.0 —
W
V
DD
= 3.6V
— 1.5 —
V
DD
= 3.2V
— 1.2 —
THD+N = 1%, f = 1kHz, R = 4Ω
V
DD
= 5.0V
— 2.4 —
W
V
DD
= 3.6V
— 1.25 —
V
DD
= 3.2V
— 1.0 —
THD+N = 10%, f = 1kHz, R = 8Ω
V
DD
= 5.0V
— 1.75 —
W
V
DD
= 3.6V
— 0.90 —
V
DD
= 3.2V
— 0.70 —
THD+N = 1%, f = 1kHz, R = 8Ω
V
DD
= 5.0V
— 1.40 —
W
V
DD
= 3.6V
— 0.72 —
V
DD
= 3.2V
— 0.60 —
THD+N
Total Harmonic
Distortion Plus
Noise
V
DD
= 5.0V, P
O
= 1W, R = 8Ω
f = 1kHz
— 0.17 —
%
V
DD
= 3.6V, P
O
= 0.1W, R = 8Ω
— 0.16 —
V
DD
= 3.2V, P
O
= 0.1W, R = 8Ω
— 0.14 —
V
DD
= 5.0V, P
O
= 0.5W, R = 4Ω
f = 1kHz
— 0.14 —
%
V
DD
= 3.6V, P
O
= 0.2W, R = 4Ω
— 0.16 —
V
DD
= 3.2V, P
O
= 0.1W, R = 4Ω
— 0.17 —
PSRR
Power Supply Ripple
Rejection
V
DD
= 3.6V, Inputs ac-grounded
with C = 1μF
f = 217Hz
— -68 —
dB
f = 1kHz — -70 —
f = 10kHz — -67 —
Dyn Dynamic Range
V
DD
= 5V,THD = 1%, R = 8Ω
f = 1kHz
— 95 — dB
Vn Output Noise Inputs AC-grounded
No A weighting
— 170 —
μV
A-weighting — 130 —
η Efficiency
RL= 8Ω, THD = 10%
f = 1kHz
— 93 —
%
RL= 4Ω, THD = 10% — 86 —
IQ Quiescent Current
V
DD
= 5V
No Load
— 5 — mA
Isd Shutdown Current
V
DD
= 2.8V to 5V S
D
= 0V
— —1 μA
Rdson
Static Drain-to Source
On-state Resistor
High Side PMOS, I = 500mA
V
DD
= 5.0V
— 325 — mΩ
Low Side NMOS, I = 500mA
V
DD
= 5.0V
— 200 — mΩ
fsw Switching Frequency
V
DD
= 2.8V to 5V
—
— 400 kHz
Gv Closed-loop Gain
V
DD
= 2.8V to 5V
—
—
300K/R
IN
— V/V
RIN Input Impedance
V
DD
= 2.8V to 5V
28.5 KΩ
Vos Output Offset Voltage
Input AC-ground, V
DD
= 5V
—
— — 20 mV
VIH SD Input High Voltage
V
DD
= 5V
—
1.4 — —
V
VIL SD Input Low Voltage
V
DD
= 5V
—
— — 1.0
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