Diodes BC847AT, BT, CT Manuale Utente

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BC847AT, BT, CT
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Die Construction
Complementary PNP Types Available
(BC857AT,BT,CT)
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 4 and 5)
Mechanical Data
DS30274 Rev. 9 - 2
1 of 3
www.diodes.com
BC847AT, BT, CT
© Diodes Incorporated
Case: SOT-523
Case Material - Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
Terminal Connections: See Diagram
Marking Code: See Table
Ordering Information: See Page 2
Marking Information: See Page 2
Weight: 0.002 grams (approximate)
Type Marking
BC847AT 1E
BC847BT 1F
BC847CT 1M
SOT-523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D
0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
α
0° 8°
All Dimensi mm ons in
A
M
J
L
D
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
45 V
Emitter-Base Voltage
V
EBO
6.0 V
Collector Current
I
C
100 mA
Power Dissipation (Note 1)
P
d
150 mW
Thermal Resistance, Junction to Ambient (Note 1)
R
θ
JA
833 °C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150 °C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
DC Current Gain (Note 3) Current Gain A
B
C
h
FE
110
200
420
290
520
220
450
800
V
CE
= 5.0V, I
C
= 2.0mA
Collector-Emitter Saturation Voltage (Note 3)
V
CE(SAT)
250
600
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage (Note 3)
V
BE(SAT)
700
900
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Voltage (Note 3)
V
BE
580
660
700
770
mV
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
=5.0V, I
C
= 10mA
Collector-Emitter Cutoff Current (Note 3)
I
CBO
I
CBO
15
5.0
nA
µA
V
CB
= 30V
V
CB
= 30V, T
A
= 150°C
Gain Bandwidth Product
f
T
100 MHz
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
Output Capacitance
C
OBO
4.5 pF
V
CB
= 10V, f = 1.0MHz
BC847BT
Noise Figure BC847CT
NF
10
4.0
dB
V
CE
= 5V, R
S
= 2.0kΩ,
f = 1.0kHz, BW = 200Hz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Short duration pulse test used to minimize self-heating effect.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
B
C
H
K
G
TOP VIEW
C
E
B
N
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1 2 3

Sommario

Pagina 1 - BC847AT, BT, CT

BC847AT, BT, CT NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Die Construction • Complementary PNP Types Available (BC857AT,BT,C

Pagina 2 - V = 10V

DS30274 Rev. 9 - 2 2 of 3 www.diodes.com BC847AT, BT, CT © Diodes Incorporated 01001505020025001202001101001,0001.0 10 1000.10.01h DV = 5VCEP,

Pagina 3 - © Diodes Incorporated

DS30274 Rev. 9 - 2 3 of 3 www.diodes.com BC847AT, BT, CT © Diodes Incorporated IMPORTANT NOTICE Diodes Incorporated and its subsidiaries res

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