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DS30296 Rev. 9 - 2
1 of 5
www.diodes.com
CTA2P1N
© Diodes Incorporated
CTA2P1NCTA2P1N
COMPLEX TRANSISTOR ARRAY
Features
• Combines MMBT4403 type transistor with 2N7002 type
MOSFET
• Small Surface Mount Package
• NPN/P-Channel Complement Available: CTA2N1P
• Lead Free/RoHS Compliant (Note 1)
• "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Terminal Connections: See Diagram
• Marking Information: A80, See Page 5
• Ordering Information: See Page 5
• Weight: 0.006 grams (approximate)
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
J
⎯
0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
α
0° 8°
All Dimens ons in mm i
A
M
J
L
D
B C
H
K
F
B
Q1
S
Q2
D
Q2
E
Q1
C
Q1
G
Q2
Q2
Q1
NEW P PRODODUCT T R UC
Maximum Ratings, Total Device @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 2)
P
d
150 mW
Thermal Resistance, Junction to Ambient (Note 2)
R
θ
JA
833
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Maximum Ratings, Q1, MMBT4403 PNP Transistor Element @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-40 V
Collector-Emitter Voltage
V
CEO
-40 V
Emitter-Base Voltage
V
EBO
-5.0 V
Collector Current - Continuous
I
C
-600 mA
Maximum Ratings, Q2, 2N7002 N-Channel MOSFET Element @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
60 V
Drain-Gate Voltage R
GS
≤ 1.0MΩ V
DGR
60 V
Gate-Source Voltage Continuous
Pulsed
V
GSS
±20
±40
V
Drain Current (Note 2) Continuous
Continuous @ 100°C
Pulsed
I
D
115
73
800
mA
Notes: 1. No purposefully added lead.
2. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Sommario
Pagina 1 - CTA2P1NCTA2P1N
DS30296 Rev. 9 - 2 1 of 5 www.diodes.com CTA2P1N © Diodes Incorporated CTA2P1NCTA2P1N COMPLEX TRANSISTOR ARRAY Features • Combines MMBT4403 typ
Pagina 2
DS30296 Rev. 9 - 2 2 of 5 www.diodes.com CTA2P1N © Diodes Incorporated NEW PRODUCT Electrical Characteristics, Q1, MMBT4403 PNP Transistor Elem
Pagina 3 - © Diodes Incorporated
DS30296 Rev. 9 - 2 3 of 5 www.diodes.com CTA2P1N © Diodes Incorporated MMBT4403 Section 15201030-0.1-10-1.0-30CAPACITANCE (pF)REVERSE VOLTAGE (
Pagina 4 - V = 10V
DS30296 Rev. 9 - 2 4 of 5 www.diodes.com CTA2P1N © Diodes Incorporated MMBT4403 Section (Continued) 05010025 5075100 125150175200P, POWER DISSIP
Pagina 5
DS30296 Rev. 9 - 2 5 of 5 www.diodes.com CTA2P1N © Diodes Incorporated 2N7002 Section (Continued) 021430 0.2 0.4 0.6 0.81V GATE SOURCE VOLTAGE (
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