Diodes DMN55D0UT Manuale Utente Scaricare il pdf (Pagina 2)

DMN55D0UT

Document number: DS31330 Rev. 5 - 2

2 of 5

www.diodes.com

December 2012

DMN55D0UT

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage

DSS

50 V

Gate-Source Voltage

GSS

±12

Drain Current (Note 5) Continuous

160 mA

Pulsed Drain Current (Note 5)

560 mA

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

200 mW

Thermal Resistance, Junction to Ambient

625

°C/W

Operating and Storage Temperature Range

, T

STG

-55 to +150

°C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

DSS

⎯ ⎯

= 0V, I

= 250μA

Zero Gate Voltage Drain Current

DSS

⎯ ⎯

μA

= 50V, V

= 0V

Gate-Body Leakage

GSS

⎯ ⎯

1.0

5.0

μA

= ±8V, V

= 0V

= ±12V, V

= 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

(

)

0.7 0.8 1.0 V

= V

, I

= 250μA

Static Drain-Source On-Resistance

DS (ON)

⎯

3.1 4

= 4V, I

= 100mA

⎯

4 5

= 2.5V, I

= 80mA

Forward Transconductance

180

⎯ ⎯

= 10V, I

= 100mA, f = 1.0KHz

DYNAMIC CHARACTERISTICS

Input Capacitance

iss

⎯

= 10V, V

= 0V, f = 1.0MHz

Output Capacitance

oss

⎯

Reverse Transfer Capacitance

rss

⎯

2.1

⎯

Notes: 5. Device mounted on FR-4 PCB, pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at

http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

1 2 3 4 5

Commenti su questo manuale

Nessun commento

Diodes DMN55D0UT Manuale Utente Pagina 2

Commenti su questo manuale

Prodotti e manuali riguardandi Hardware Diodes DMN55D0UT