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DMN62D0SFD

Document number: DS35473 Rev. 3 - 2

1 of 6

www.diodes.com

January 2012

DMN62D0SFD

NEW PRODUCT

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(ON)

= 25°C

60V

2Ω @ V

= 10V

540mA

3Ω @ V

= 5V

430mA

Description and Applications

This new generation MOSFET has been designed to minimize the

on-state resistance (R

DS(on)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

• DC-DC Converters

• Power management functions

• Battery Operated Systems and Solid-State Relays

• Load switch

Features and Benefits

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected Gate to 2kV

• Lead Free/RoHS Compliant (Note 1)

• Green Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X1-DFN1212-3

• Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Solderable per MIL-STD-202, Method 208

• Terminals: Finish – NiPdAu over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.005 grams (approximate)

Ordering Information (Note 3)

Part Number Case Packaging

DMN62D0SFD-7 X1-DFN1212-3 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

Date Code Key

Year 2007 2008 2009 2010 2011 2012

Code U V W X Y Z

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Top View Bottom View Equivalent Circuit Top view

Pin-out

K62 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Y = 2011)

M = Month (ex: 9 = September)

Source

Gate

Protection

Diode

Gate

Drain

Body

Diode

ESD PROTECTED TO 2kV

K62

1 2 3 4 5 6

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