
SBR is a registered trademark of Diodes Incorporated.
SBR660CTLQ
Document number: DS36093 Rev. 1 - 2
3 of 6
www.diodes.com
October 2012
© Diodes Incorporated
SBR660CTLQ
0102030405060
0.1
1
10
100
1,000
10,000
100,000
I, I
S
A
A
E
S
EVE
SE
E
(µA)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 3 Typical Reverse Characteristics
T = 25°C
A
T = 125°C
A
T = 150°C
A
10
100
1,000
10,000
0.1 1 10 100
V , DC REVERSE VOLTAGE (V)
R
Figure 4 Total Capacitance vs. Reverse Voltage
,
AL
A
A
I
AN
E (pF)
T
f = 1MHz
25 50 75 100 125 150 175
T , AMBIENT TEMPERATURE (°C)
A
Figure 5 Forward Current Derating Curve
0
1
2
3
4
5
6
I, AVE
A
E F
WA
D
EN
(A)
F(AV)
R = R
Per Element
θθ
JA JC
R = R
Total Device
θθ
JA JC
R = 74°C/W
Per Element
JA
θ
0
25
50
75
100
125
150
0 6 12 18 24 30 36 42 48 54 60
Figure 6 Operating Temperature Derating
V , DC REVERSE VOLTAGE (V)
R
T , DERATED AMBIENT TEMPERATURE (°C)
A
50
25 50
75 100 125
150
, AVALAN
E
EAK
LSE
WE
DERATING PERCENTAGE (%)
ARM
T , JUNCTION TEMPERATURE (°C)
Figure 7 Pulse Derating Curve
J
0
25
75
175 200
100
125
0
0.01 0.1 1 10 100 10,000
T , PULSE DURATION (µS)
P
Figure 8 Maximum Avalanche Power Curve, Per Element
100,000
, MAXIM
M AVALA
E
WE
(W)
ARM
10,000
1,000
100
1,000
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