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ISSUE 1 - SEPTEMBER 2000

ZXT10P40DE6

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

(BR)CBO

-40 -80 V I

=-100␮A

Collector-Emitter Breakdown

Voltage

(BR)CEO

-40 -70 V I

=-10mA*

Emitter-Base Breakdown Voltage V

(BR)EBO

-5 -8.8 V I

=-100␮A

Collector Cut-Off Current I

CBO

-100 nA V

=-35V

Emitter Cut-Off Current I

EBO

-100 nA V

=-4V

Collector Emitter Cut-Off Current I

CES

-100 nA V

CES

=-35V

Collector-Emitter Saturation

Voltage

CE(sat)

-25

-150

-195

-210

-40

-220

-300

=-0.1A, I

=-10mA*

=-1A, I

=-50mA*

=-1.5A, I

=-50mA*

=-2A, I

=-200mA*

Base-Emitter Saturation Voltage V

BE(sat)

-0.95 -1.00 V I

=-2A, I

=-200mA*

Base-Emitter Turn-On Voltage V

BE(on)

-0.85 -0.95 V I

=-2A, V

=-2V*

Static Forward Current Transfer

Ratio

300

180

480

450

290

130

=-10mA, V

=-2V*

=-0.1A, V

=-2V*

=-1A, V

=-2V*

=-1.5A, V

=-2V*

=-3A, V

=-2V*

Transition Frequency f

150 190 MHz I

=-50mA, V

=-10V

f=100MHz

Output Capacitance C

obo

19 25 pF V

=-10V, f=1MHz

Turn-On Time t

(on)

40 ns V

=-15V, I

=-0.75A

=-15mA

Turn-Off Time t

(off)

435 ns

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

1 2 3 4 5 6

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